SIHFU9010中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Dynamic dV/dt rating

? Repetitive avalanche ratings

? Surface-mount (IRFR9010, SiHFR9010)

? Straight lead (IRFU9010, SiHFU9010)

? Simple drive requirements

? Ease of paralleling

? Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface-mount package brings the advantages of

power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.