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SIHFBC30A

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=2.2?(MAX) ?Enhancementmode: Vth=2to4.5V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHFBC30A

N-Channel 650 V (D-S) MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHFBC30A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC30AL

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC30AL_V01

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC30AL-E3

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC30AL-GE3

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC30AS

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHFBC30AS

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFBC30AS-E3

Power MOSFETs

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?ComplianttoRo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    SIHFBC30A

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VIS
23+
TO-220
10000
原裝正品,假一罰十
 詢價(jià)
VB
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
VISHAY/威世
2022+
TO-220
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
VISHAY/威世
23+
TO-220AB
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
toshiba
2023+
TO-220
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
VISHAY/威世
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
VISHAY/威世
20+
TO-220
7500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
Vishay
18+
NA
3063
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
Vishay
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢價(jià)
更多SIHFBC30A供應(yīng)商 更新時(shí)間2025-1-28 15:36:00

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