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SI4967DY

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFETs:1.8VRated ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導體

SI4967DY

Dual P-Channel 1.8-V (G-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SI4967DY_V01

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFETs:1.8VRated ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導體

SI4967DY-T1

Dual P-Channel 1.8-V (G-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

4967

LouveredPlugs

HeycoHeyco.

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AM4967

ADJUSTABLE-SPEEDSINGLE-PHASEFULL-WAVEPRE-DRIVERFORMOTOR

DIODES

Diodes Incorporated

AM4967

ADJUSTABLE-SPEEDSINGLE-PHASEFULL-WAVEPRE-DRIVERFORMOTOR

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

AM4967GS

ADJUSTABLE-SPEEDSINGLE-PHASEFULL-WAVEPRE-DRIVERFORMOTOR

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

AM4967RGS

ADJUSTABLE-SPEEDSINGLE-PHASEFULL-WAVEPRE-DRIVERFORMOTOR

BCDSEMIBCD Semiconductor Manufacturing Limited

新進半導體上海新進半導體制造有限公司

N4967A

N4967ASerialBERTSystem44Gb/s40GBERtestsystem

KEYSIGHTKeysight Technologies

是德科技是德科技（中國）有限公司

NTE4967

SurgeClamping,TransientOvervoltageSuppressorBidirectional

Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime

NTE

NTE Electronics

PE4967

CFemaleConnectorClamp-SolderAttachment4HoleFlangeForRG213,RG214,RG8,RG9,RG11,RG225,RG393,.718inchHoleSpacing

PASTERNACK

Pasternack Enterprises, Inc.

SZN4967

5W6.8??390VOLTSZENERDIODES

SSDI

Solid States Devices, Inc

SZN4967

6.8??390VOLTSZENERDIODES

FEATURES: ?HermeticallyGlassSealed ?HighPowerDissipation5W ?TightVoltageTolerance5 ?ForotherVoltage,Power,orToleranceConsultFactory. ?TX,TXV,andS-LevelScreeningAvailable5/. ?Replacementfor1N4954–1N4996

SSDI

Solid States Devices, Inc

詳細參數(shù)

  • 型號：

    SI4967DY

  • 功能描述：

    MOSFET 12V 7.5A 2W

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
VISHAY
24+
SOP8
241
詢價
VISHAY
23+
SOIC-8
5000
原裝正品,假一罰十
 詢價
SI
24+
8P
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
VISHAY
18+
SOIC-8
17455
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
 詢價
VISHAY/威世
24+
SOIC-8
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
VISHAY/威世
2021+
SOIC-8
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VISHAY/威世
22+
SOIC-8
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
VISHAY
21+
SOIC-8
10000
原裝現(xiàn)貨假一罰十
 詢價
SI
23+
DUAL SOP-8
28372
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
SIL
23+
SOP8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多SI4967DY供應商 更新時間2025-1-1 15:30:00

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