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SGM2016

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016M/PisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellularradio,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.)at900MHz

SonySony Corporation

索尼

SGM2016

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016AM/APisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.

SonySony Corporation

索尼

SGM2016AM

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016AM/APisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.

SonySony Corporation

索尼

SGM2016AN

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016ANisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Ultra-smallpackage ?Lowvoltageoperation ?Lowno

SonySony Corporation

索尼

SGM2016AP

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016AM/APisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.

SonySony Corporation

索尼

SGM2016M

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016M/PisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellularradio,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.)at900MHz

SonySony Corporation

索尼

SGM2016P

GaAs N-channel Dual-Gate MES FET

Description TheSGM2016M/PisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellularradio,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.)at900MHz

SonySony Corporation

索尼

SLG2016

X/YStackable0.180???4-Digit5x7DotMatrixAlphanumericIntelligentDisplay?DeviceswithMemory/Decoder/Driver

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

SLG2016

AlphanumericIntelligentDisplayDEVICESWITHMEMORY/DECODER/DRIVER

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SLO2016

X/YStackable0.180???4-Digit5x7DotMatrixAlphanumericIntelligentDisplay?DeviceswithMemory/Decoder/Driver

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    SGM2016

  • 制造商:

    SONY

  • 制造商全稱:

    Sony Corporation

  • 功能描述:

    GaAs N-channel Dual-Gate MES FET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
SONY
24+
SOT-143SOT-23-4
6200
新進(jìn)庫存/原裝
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SONY
17+
SOT-143
6200
100%原裝正品現(xiàn)貨
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SONY
2016+
SOT143
6600
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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原廠正品
23+
XX
5000
原裝正品,假一罰十
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SONY
23+
SOT143
12000
全新原裝優(yōu)勢
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SONY
24+
SOT-143
5000
只做原裝公司現(xiàn)貨
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SONY
SOT-143
10265
提供BOM表配單只做原裝貨值得信賴
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SONY
1742+
SOT143
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
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SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
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SONY
21+
42664
12588
全新原裝深圳現(xiàn)貨
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更多SGM2016供應(yīng)商 更新時(shí)間2025-1-30 15:30:00