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80N60A

HiPerFASTIGBT

IXYS

IXYS Corporation

80N60B

HighCurrentIGBT

IXYS

IXYS Corporation

FGH80N60FD

600V,80AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?sfieldstopIGBTsoffertheoptimumperformanceforinductionheating,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGH80N60FDTU

600V,80AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?sfieldstopIGBTsoffertheoptimumperformanceforinductionheating,telecom,ESSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGH80N60FDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

G80N60UFD

UltrafastIGBT

GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeeds

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXGK80N60A

HiPerFASTIGBT

IXYS

IXYS Corporation

IXSK80N60B

HighCurrentIGBTShortCircuitSOACapability

Features ?Internationalstandardpackages ?Veryhighcurrent,fastswitchingIGBT ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepow

IXYS

IXYS Corporation

IXSN80N60A

HighCurrentIGBT-ShortCircuitSOACapability

IXYS

IXYS Corporation

IXSX80N60B

HighCurrentIGBTShortCircuitSOACapability

Features ?Internationalstandardpackages ?Veryhighcurrent,fastswitchingIGBT ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepow

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    SGL80N60UFDTU

  • 功能描述：

    IGBT 晶體管

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

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更多SGL80N60UFDTU供應(yīng)商 更新時間2025-2-21 15:55:00

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