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SFT2012

HIGH ENERCY NPN TRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

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未分類制造商

SFT2012

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2012

High Energy NPN Transistor

200AMP100–140VoltHighEnergyNPNTransistor Features: ?BVCBO=250VMIN ?600WattsPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighReliabilityConstruction ?PlanarChipConstructionwithLowLeakageandVeryFastSwitching ?TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SFT2012/3

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2012SLASH3

200 AMP 100-140 VOLTS NPN TRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SG2012

400mA,LowPower,LowDropout,LinearRegulators

GENERALDESCRIPTION TheSG2012low-power,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto400mA.Theyareperfectchoiceforlowvoltage,lowpowerapplications.Anultralowgroundcurrent(120μAat400mAoutput)makesthemattractiveforbatteryo

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2012

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號：

    SFT2012

  • 功能描述：

    HIGH ENERCY NPN TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST/MOTO
23+
CAN to-39
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
ST
23+
CAN to-39
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
24+
CAN to-39
200000
原裝進(jìn)口正口,支持樣品
 詢價(jià)
Luminus
20000
詢價(jià)
24+
N/A
50000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
ST
24+
CAN3
500
原裝現(xiàn)貨假一罰十
 詢價(jià)
ST
專業(yè)鐵帽
CAN3
500
原裝鐵帽專營,代理渠道量大可訂貨
 詢價(jià)
ST
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價(jià)
ST
22+
CAN to-39
16900
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!
 詢價(jià)
更多SFT2012供應(yīng)商 更新時(shí)間2025-3-10 15:57:00

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