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SFS9Z24

Advanced Power MOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●175°COperatingTemperature ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=-60V ●LowRDS(ON):0.206?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFS9Z24

isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SFW9Z24

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SFWI9Z24

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SiHF9Z24

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z24S,SiHF9Z24S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24STL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z24STR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFI9Z24G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SVD9Z24NT

-12A,-55VP-CHANNELMOSFET

GENERALDESCRIPTION SVD9Z24NTisaP-channelenhancementmodepowerMOSfieldeffect transistorwhichisproducedusingSilanplanarVDMOSprocess.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance, an

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

UF9Z24

12A,55VP-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SFS9Z24

  • 功能描述：

    MOSFET PCh/60V/7.5a/0.28Ohm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
仙童
06+
TO-220F
1200
原裝
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
F
23+
TO-
10000
公司只做原裝正品
 詢價(jià)
F
22+
TO-
6000
十年配單,只做原裝
 詢價(jià)
FAIRCHILD/仙童
23+
TO-220F
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
F
23+
TO-
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
F
2020+
TO-
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
FAIRCHILD/仙童
2022+
80
全新原裝 貨期兩周
 詢價(jià)
VB
21+
TO-
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO-220F
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價(jià)
更多SFS9Z24供應(yīng)商 更新時(shí)間2024-12-27 16:17:00

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