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SIHFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR1N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SiHFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

SIHFR1N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR1N60A

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SIHFR1N60AT

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR1N60AT

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SIHFU1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFU1N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFU1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

SiHFU1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

SIHFU1N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SSFP1N60

StarMOSTPowerMOSFET

Good-Ark

GOOD-ARK Electronics

SSI1N60A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowRDS(ON):9.390?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSI1N60B

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSP1N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSP1N60A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSP1N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSP1N60A

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
S&E
1937+
TO251
9852
只做進(jìn)口原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
JDT/集電通
23+
SMD
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
集電通/JDT
24+
SMD
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價
JDT/集電通
18+
SMD
88000
原裝現(xiàn)貨
詢價
CONQUER/功
24+
4880
全新原裝數(shù)量均有多電話咨詢
詢價
CONQUER/功
2022+
4880
原廠代理 終端免費(fèi)提供樣品
詢價
24+
2000
詢價
CHINAXYJ
23+
2411
9868
專做原裝正品,假一罰百!
詢價
SeCoS
20+
SMA(DO-214AC)
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
SeCoS
24+
85000
原裝現(xiàn)貨假一賠十
詢價
更多SEF1N60I供應(yīng)商 更新時間2025-1-7 16:41:00