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SCTW100N120G2AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
SCTW100N120G2AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | HiP247 |
| 文件大小 |
217.31 Kbytes |
| 頁(yè)面數(shù)量 |
11 頁(yè) |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡(jiǎn)稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱 | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-31 17:10:00 |
SCTW100N120G2AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? High speed switching performance
? Very fast and robust intrinsic body diode
? Low capacitances
? Very high operating junction temperature capability (TJ = 200 °C)
Applications
? Traction for inverters
? DC-DC converters
? Solar inverters
? OBC
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
21+ |
HIP247 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
TO-247 |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ST |
21+ |
HIP247 |
10000 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
ST |
23+ |
TO-247 |
600 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
STMicroelectronics |
24+ |
原廠封裝 |
306097 |
有掛就有貨只做原裝正品 |
詢價(jià) | ||
ST |
23+ |
TO-247 |
20000 |
詢價(jià) | |||
ST |
22+ |
HIP247 |
6000 |
鼎欣微只做原裝,可開專票價(jià)格優(yōu)勢(shì)。 |
詢價(jià) | ||
ST |
24+ |
HIP247 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
ST |
2021+ |
HiP247 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
ST |
22+ |
HIP247 |
12000 |
只有原裝,原裝,假一罰十 |
詢價(jià) |
