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SCT10N120AG

Marking:SCT10N120AG;Package:HiP247;Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

Features ?AEC-Q101qualified ?Verytightvariationofon-resistancevs.temperature ?Veryhighoperatingtemperaturecapability(TJ=200°C) ?Veryfastandrobustintrinsicbodydiode ?Lowcapacitance Applications ?Motordrives ?EVchargers ?HighvoltageDC-DCconverters ?Swi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

Intersil

Intersil Corporation

BRG10N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

HGTG10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTG10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG10N120BND

35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

Intersil

Intersil Corporation

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

Intersil

Intersil Corporation

HGTP10N120BN

35A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HM10N120T

1200V/10ATrenchFieldStopIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

MPCK10N120A

ZeroReverseRecoveryCurrent

Features ?ZeroReverseRecoveryCurrent ?ZeroForwardRecoveryVoltage ?Temperature-independentSwitchingBehavior ?PositiveTemperatureCoefficientonVF ?High-speedswitchingpossible ?Highsurgecurrentcapability Applications ?SwitchModePowerSupply(SMPS) ?MotorDrives ?

FS

First Silicon Co., Ltd

SCT10N120

HighvoltageDC-DCconverters

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SGH10N120RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH10N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

UG10N120

NPTSERIESN-CHANNELIGBT

UTCUnisonic Technologies

友順友順科技股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
HIP247
100000
全新原裝
詢價(jià)
STMicroelectronics
24+
HiP247?
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
ST
23+
HIP247
16900
正規(guī)渠道,只有原裝!
詢價(jià)
STMicroelectronics
23+
SMD
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
詢價(jià)
ST
HIP247
36900
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
ST
22+
HIP247
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
詢價(jià)
ST
19+
TO247
500
全新原裝只做自己庫(kù)存只做原裝
詢價(jià)
TSONY
21+
SSOP
23000
只做正品原裝現(xiàn)貨
詢價(jià)
TDK-LAMBD
24+
DIP
500
TDK-LAMBDA電源專營(yíng)現(xiàn)貨原裝正品專營(yíng)
詢價(jià)
SMC Diode Solutions
24+
TO-220-3
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
更多SCT10N120AG供應(yīng)商 更新時(shí)間2024-11-28 16:20:00