首頁(yè)>SCT018H65G3AG>規(guī)格書(shū)詳情
SCT018H65G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
SCT018H65G3AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H2PAK-7 package |
| 文件大小 |
390.98 Kbytes |
| 頁(yè)面數(shù)量 |
14 頁(yè) |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡(jiǎn)稱(chēng) |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱(chēng) | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-4 17:55:00 |
SCT018H65G3AG規(guī)格書(shū)詳情
Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
N/A |
8000 |
只做原裝正品 |
詢(xún)價(jià) | ||
STMicro |
22+ |
NA |
4000 |
原裝正品支持實(shí)單 |
詢(xún)價(jià) | ||
24+ |
789 |
詢(xún)價(jià) | |||||
ST |
2023 |
NA |
3856 |
原廠代理渠道,正品保障 |
詢(xún)價(jià) | ||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢(xún)價(jià) | ||
ST |
22+ |
30000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢(xún)價(jià) | |||
ST |
47920 |
只做正品 |
詢(xún)價(jià) | ||||
STMicroelectronics |
23+ |
SMD |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢(xún)價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
ST |
23+ |
QFN |
9789 |
只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) |
