首頁(yè) >SCP6F11-GL-CWE>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
InfraredEmittingDiodes(GaAs) | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
InfraredEmittingDiodes(GaAs) | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
InfraredEmittingDiodes(GaAs) | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
SurfaceMountTRANSZORB?TransientVoltageSuppressors | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Surface-MountTRANSZORB?TransientVoltageSuppressors FEATURES ?Verylowprofile-typicalheightof0.95mm ?Idealforautomatedplacement ?Unidirectionalonly ?Excellentclampingcapability ?Peakpulsepower: -600W(10/1000μs) -4kW(8/20μs) ?ESDcapability:IEC61000-4-2level4 -15kV(air) -8kV(contact) ?MeetsMSLleve | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
600WTVSinSMAFlat Features ?Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) ?Flatandthinpackage:1mm ?Stand-offvoltagerangefrom5Vto188V ?Unidirectionaltype ?Lowleakagecurrent:0.2μAat25°Cand1μAat85°C ?OperatingTjmax:175°C ?HighpowercapabilityatTjmax.:upto40 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
600WTVSinSMBFlat Features ?Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) ?Flatandthinpackage:1mm ?Stand-offvoltagerangefrom5Vto188V ?Unidirectionaltype ?Lowleakagecurrent:0.2μAat25°Cand1μAat85°C ?OperatingTjmax:175°C ?HighpowercapabilityatTjmax.:upto47 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Surface-MountPAR?TransientVoltageSuppressors FEATURES ?Verylowprofile-typicalheightof0.95mm ?Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology ?TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement ?Idealforautomatedplacement ?Unidirectionalonly ?Excellentcl | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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