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SS2712

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

SS2712ESOT

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

SS2712EUA

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

SS2712KSOT

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

SS2712KUA

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

SS2712LSOT

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

SS2712LUA

HallLatch-HighSensitivity

SECELECTRONICS

SEC Electronics Inc.

TCD2712DG

TOSHIBACCDLinearImageSensorCCD

TheTCD2712DGisahighsensitiveandlowdarkcurrent7500 elements?3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7500elements?3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TMD2712

ALSProximitySensorModule

Features ?Tiny1mmx2mmx0.5mmmodule ?1.8Vpowersupplywith1.8VI2Cbus ?Sleepmode(0.7μA) ?VCSELIRemitter ?Integratedfactorycalibrated940nmIRVCSEL ?Crosstalkandambientlightcancellation ?Wideconfigurationrange ?Highsensitivity ?2channels(photopicALS+IR)

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

TW2712

TW2710andTW2712SingleBandGNSSAntennas

TALLYSMAN

Tallysman Wireless Inc.

UPA2712GR

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

UPA2712GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2712GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=21mΩMAX.(VGS=?4.5V,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2712GR

SWITCHINGP-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC2712T

2.6GHzWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT

DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC2712T

2.5GHzSILICONMMICWIDE-BANDAMPLIFIER

DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC2712TB

3.3V,SILICONGERMANIUMMMICWIDEBANDAMPLIFIER

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2712TB

5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC2712TB

5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC2712TB

BIPOLARANALOGINTEGRATEDCIRCUIT

CEL

California Eastern Labs

UPC2712TB

5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER

CEL

California Eastern Labs

晶體管資料

  • 型號(hào):

    SA2712

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    差分放大 (Diff)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    8

  • 可代換的型號(hào):

    3DG110C,

  • 最大耗散功率:

    0.3W

  • 放大倍數(shù):

    β>150

  • 圖片代號(hào):

    D-60

  • vtest:

    60

  • htest:

    999900

  • atest:

    0

  • wtest:

    0.3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SUP-TECH
23+
2.75X1.85
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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Bourns
22+
NA
5889
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BOURNS
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價(jià)
24+
N/A
75000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
BOURNS
20+
電路保護(hù)
3917
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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FUJ
24+
3000
自己現(xiàn)貨
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RFMD
QFN
6698
詢價(jià)
TC
7634
CAN-6P
5
普通
詢價(jià)
SILAN
2020+
TO94
4100
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
SILAN/士蘭微
24+
65230
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更多SA2712供應(yīng)商 更新時(shí)間2024-12-27 11:10:00