S27KS0642GABHV020集成電路（IC）的存儲器規(guī)格書PDF中文資料

Features

? Interface

- HYPERBUS? interface

- 1.8 V / 3.0 V interface support

? Single-ended clock (CK) - 11 bus signals

? Optional differential clock (CK, CK#) - 12 bus signals

- Chip select (CS#)

- 8-bit data bus (DQ[7:0])

- Hardware reset (RESET#)

- Bidirectional read-write data strobe (RWDS)

? Output at the start of all transactions to indicate refresh latency

? Output during read transactions as Read data strobe

? Input during write transactions as Write data mask

- Optional DDR center-aligned read strobe (DCARS)

? During read transactions RWDS is offset by a second clock, phase shifted from CK

? The phase shifted clock is used to move the RWDS transition edge within the read data eye

? Performance, power, and packages

- 200 MHz maximum clock rate

- DDR - transfers data on both edges of the clock

- Data throughput up to 400 MBps (3,200 Mbps)

- Configurable burst characteristics:

? Linear burst

- Wrapped burst lengths:

? 16 bytes (8 clocks)

? 32 bytes (16 clocks)

? 64 bytes (32 clocks)

? 128 bytes (64 clocks)

- Hybrid option - one wrapped burst followed by linear burst

? Configurable output drive strength

? Power modes

- Hybrid Sleep mode

- Deep power-down

? Array refresh

- Partial memory array (1/8, 1/4, 1/2, and so on)

- Full

? Package

- 24-ball FBGA

? Operating temperature range

- Industrial (I): -40°C to +85°C

- Industrial Plus (V): -40°C to +105°C

- Automotive, AEC-Q100 grade 3: -40°C to +85°C

- Automotive, AEC-Q100 grade 2: -40°C to +105°C

? Technology

- 38-nm DRAM