首頁 >RT8510AGQW>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
12-BitSamplingA/DConverters DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu | SipexSipex Corporation 西伯斯西伯斯公司 | Sipex | ||
12-BitSamplingA/DConverters DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu | SipexSipex Corporation 西伯斯西伯斯公司 | Sipex | ||
12-BitSamplingA/DConverters DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu | SipexSipex Corporation 西伯斯西伯斯公司 | Sipex | ||
MouldedTypeStraightPlugs | HOSIDEN Hosiden Corporation | HOSIDEN | ||
26WBTLand2x13WSEpoweramplifiers | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
26WBTLand2x13WSEpoweramplifiers | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TransistorSiliconNPNEpitaxialType High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
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