首頁(yè) >RSR030N06TL>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
RSR030N06TL | N-Channel 60-V (D-S) MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Available ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?BatterySwitch ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerTrench?MOSFET60V,193A,3.2mW | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerTrench?MOSFET60V,100A,3m? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerTrench?MOSFET60V,193A,3.2m? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelPowerTrench?MOSFET60V,195A,3.1m | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerTools,BatteryOperatedVacuum | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,DualN-Channel,DUALSO-8FL60V,29.7m,19A Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWD030N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Ha | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS030N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fre | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Nch60V3APowerMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
4VDriveNchMOSFET ■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Nch60V3APowerMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Nch60V3ASmallSignalMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM |
詳細(xì)參數(shù)
- 型號(hào):
RSR030N06TL
- 功能描述:
MOSFET Med Pwr, Sw MOSFET N Chan, 60V, 3A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ROHM/羅姆 |
21+ |
SOT23 |
50000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn) |
詢價(jià) | ||
ROHM |
16+ |
TSMT3 |
12500 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
ROHM/羅姆 |
24+ |
SOT23 |
15075 |
原廠授權(quán)代理 價(jià)格絕對(duì)優(yōu)勢(shì) |
詢價(jià) | ||
ROHM/羅姆 |
2019+PB |
TSMT3 |
36000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
ROHM/羅姆 |
24+ |
SOT-23 |
505348 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
ROHM |
23+ |
SMD |
734 |
原裝現(xiàn)貨、真實(shí)庫(kù)存 |
詢價(jià) | ||
ROHM |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) | ||
ROHM |
1742+ |
SOT23-3 |
98215 |
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品! |
詢價(jià) | ||
ROHM |
13+PB |
SOT23 |
100 |
剛到現(xiàn)貨加微13425146986 |
詢價(jià) | ||
ROHM |
20+ |
SOT-23 |
43000 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) |
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