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RM20

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUMPOWER,HIGHFREQUENCYUSEINSULATEDTYPE APPLICATION Freewheeluse,Welder

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM20

Three-Phase Diode Bridge

Description: MitsubishiThree-PhaseDiodeBridgeModulesaredesignedforuseinapplicationsrequiringrectifi cationofthree-phaseAClinesintoDCvoltage.Eachmoduleconsistsofsixdiodesandtheinterconnectrequiredtoformacompletethreephasebridgecircuit.Eachdiodeiselectr

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM20

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500MilliampHighVoltageSiliconRectifier1200to2000Volts Features ?LowCost ?LowLeakage ?LowForwardVoltageDrop ?HighCurrentCapability ?HighVoltage xCaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

RM20

0.5A SURFACE MOUNT HIGH VOLTAGE RECTIFIER

Features IdeallySuitedforAutomaticAssembly LowForwardVoltageDrop SurgeOverloadRatingto30APeak LowPowerLoss Built-inStrainRelief PlasticCaseMaterialhasULFlammability ClassificationRating94V-O

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

RM20

Thick Film Chip Resistors

ETCList of Unclassifed Manufacturers

未分類制造商

RM20

Thick Film Chip Resistors

ETCList of Unclassifed Manufacturers

未分類制造商

RM2000E

500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts

500MilliampHighVoltageSiliconRectifier1200to2000Volts Features ?LowCost ?LowLeakage ?LowForwardVoltageDrop ?HighCurrentCapability ?HighVoltage xCaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

RM2003

N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel VDS=20V,ID=3A RDS(ON)

RECTRON

Rectron Semiconductor

RM200DA-20F

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE ?IDCDCcurrent................................200A ?VRRMRepetitivepeakreversevoltage........1000/1200V ?trrReverserecoverytime.............0.8μs ?InsulatedType ?ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM200DA-24F

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE ?IDCDCcurrent................................200A ?VRRMRepetitivepeakreversevoltage........1000/1200V ?trrReverserecoverytime.............0.8μs ?InsulatedType ?ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM200DG-130S

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IF...................................................................200A ●VRRM......................................................6500V ●HighInsulatedType ●2-elementinaPack ●AISiCBaseplate APPLICATION Tractiondrives,HighReliabi

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM200HA-20F

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE APPLICATION Freewheeluse,Welders

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM200HA-24F

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE APPLICATION Freewheeluse,Welders

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM200N120HD

120V N-Ch Power MOSFET

Feature HighSpeedPowerSmoothSwitching EnhancedBodydiodedv/dtcapability EnhancedAvalancheRuggedness 100%ISTested,100%RgTested LeadFree

RECTRON

Rectron Semiconductor

RM200N120T2

120V N-Ch Power MOSFET

Feature HighSpeedPowerSmoothSwitching EnhancedBodydiodedv/dtcapability EnhancedAvalancheRuggedness 100%ISTested,100%RgTested LeadFree

RECTRON

Rectron Semiconductor

RM200N120T7

120V N-Ch Power MOSFET

Feature HighSpeedPowerSmoothSwitching EnhancedBodydiodedv/dtcapability EnhancedAvalancheRuggedness 100%ISTested,100%RgTested LeadFree

RECTRON

Rectron Semiconductor

RM2020ES6

N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vos=20V,lp=0.75A Rds(on)6KV,HBM(Gate-SourceZenner) Highpowerandcurrenthandingcapab

RECTRON

Rectron Semiconductor

RM2020ES9

N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vds=20Vjo=0.75A Rds(on)

RECTRON

Rectron Semiconductor

RM20C1A-XXF

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUMPOWER,HIGHFREQUENCYUSEINSULATEDTYPE APPLICATION Freewheeluse,Welder

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

RM20C1A-XXS

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

MEDIUMPOWER,HIGHFREQUENCYUSEINSULATEDTYPE ?IDCDCcurrent..................................20A ?VRRMRepetitivepeakreversevoltage......................300/600V ?trrReverserecoverytime.............0.4μs ?InsulatedType APPLICATION Freewheeluse,Welder

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)半導(dǎo)體（Mitsubishi Electric Semiconductor）

詳細(xì)參數(shù)

  • 型號(hào)：

    RM20

  • 制造商：

    MITSUBISHI

  • 制造商全稱：

    Mitsubishi Electric Semiconductor

  • 功能描述：

    HIGH SPEED SWITCHING USE INSULATED TYPE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
BI
24+
DIP-16
12
詢價(jià)
MITSUBISHI
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
BI
DIP
53650
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
 詢價(jià)
23+
原裝正品現(xiàn)貨
10000
CDIP16
 詢價(jià)
三菱
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
原廠
23+
模塊
3562
詢價(jià)
MITSUBIS
23+
40A1200V
362
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢!
 詢價(jià)
MITSUBISHI
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
CAL-CHIP
16+
原裝進(jìn)口原廠原包接受訂貨
4000
原裝現(xiàn)貨假一罰十
 詢價(jià)
PowerexInc
23+
DIODE3PHASEBRIDGE800V40A
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
更多RM20供應(yīng)商 更新時(shí)間2024-10-27 15:30:00

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