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RFM10N15

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFM10N15

N-Channel Enhancement-Mode Power Field-Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFM10N15

N-Channel Enhancement-Mode Power Field-Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

10N15

10A,150V,0.3廓,N-CHANNELPOWERMOSFETS

UTCUnisonic Technologies

友順友順科技股份有限公司

BL10N15A

DARLINGTONCOMPLEMENTARYPOWERTRANSISTORS

APPLICATIONS ?Audio ?SeriesRegulator ?GeneralPurpose FEATURES ?Highcurrentcapability ?Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

BL10N15A-GE-B

DARLINGTONCOMPLEMENTARYPOWERTRANSISTORS

APPLICATIONS ?Audio ?SeriesRegulator ?GeneralPurpose FEATURES ?Highcurrentcapability ?Highreliability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

HM10N15D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ME10N15

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTM10N15L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP10N15

POWERFIELDEFFECTTRANSISTOR

Motorola

Motorola, Inc

MTP10N15L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RFP10N15

N-ChannelEnhancement-ModePowerField-EffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP10N15

N-ChannelEnhancement-ModePowerField-EffectTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP10N15

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESS

GE Solid State

RFP10N15

10A,150V,0.300Ohm,N-ChannelPowerMOSFETs

Features ●10A,120Vand150V ●rDS(on)=0.3Ω ●SOAisPower-DissipationLimited ●NanosecondSwitchingSpeeds ●LinearTransferCharacteristics ●HighInputImpedance ●MajorityCarrierDevice

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    RFM10N15

  • 制造商：

    GESS

  • 制造商全稱：

    GESS

  • 功能描述：

    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HAR
24+
TO-3
213
詢價(jià)
GESS
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
HAR
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
HARRIS(哈利斯)
23+
TO3
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán)
 詢價(jià)
HARRIS(哈利斯)
20+
TO-3
3000
詢價(jià)
MOSPEC
2023+
TO-3
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
MOSPEC
21+
TO-3
35210
一級(jí)代理/放心采購(gòu)
 詢價(jià)
HARRIS
2020+
N/A
174
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
HARRIS
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
HARRIS/哈里斯
2046+
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
更多RFM10N15供應(yīng)商 更新時(shí)間2024-10-26 15:30:00

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