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RFG60P06E中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

RFG60P06E
廠商型號(hào)

RFG60P06E

功能描述

60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

文件大小

380.31 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

Fairchild仙童半導(dǎo)體

中文名稱(chēng)

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 16:05:00

RFG60P06E規(guī)格書(shū)詳情

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.

Features

? 60A, 60V

? rDS(ON) = 0.030?

? Temperature Compensating PSPICE? Model

? 2kV ESD Rated

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175°C Operating Temperature

? Related Literature

產(chǎn)品屬性

  • 型號(hào):

    RFG60P06E

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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哈利斯
24+
TO-3P
16800
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N/A
3200
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FAIRCHILD
TO-247
699839
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23+
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28610
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22+
TO-247
25000
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23+
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10000
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20+
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67500
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82
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6000
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23+
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3000
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