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RFD4N06LSM中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
RFD4N06LSM規(guī)格書詳情
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages.
Features
? 4A, 60V
? rDS(ON) = 0.600?
? Design Optimized for 5 Volt Gate Drive
? Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits
? SOA is Power Dissipation Limited
? 175°C Rated Junction Temperature
? Logic Level Gate
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號:
RFD4N06LSM
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FAIRC |
2020+ |
TO-252(DPAK) |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
FAIRCHILD/仙童 |
20+PB |
TO-252 |
90000 |
20+PB |
詢價(jià) | ||
HARRIS |
2023+ |
80000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | |||
HARRIS |
9909+ |
TO-252 |
1275 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
HARRIS |
TO-252 |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
FAIRCHILD |
21+ |
TO-252 |
1498 |
原裝現(xiàn)貨庫存 |
詢價(jià) | ||
fsc |
23+ |
NA |
63065 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
INTERSIL |
24+ |
5000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | |||
onsemi(安森美) |
23+ |
TO252 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
INTERSIL/FSC |
23+ |
TO-252 |
28610 |
詢價(jià) |