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RF2125P中文資料RFMD數(shù)據(jù)手冊(cè)PDF規(guī)格書

RF2125P
廠商型號(hào)

RF2125P

功能描述

HIGH POWER LINEAR AMPLIFIER

文件大小

51.51 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 RF Micro Devices
企業(yè)簡(jiǎn)稱

RFMD

中文名稱

RF Micro Devices官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-13 20:00:00

RF2125P規(guī)格書詳情

Product Description

The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz.

Features

? Single 2.7V to 7.5V Supply

? 1W Output Power

? 14dB Gain

? 45 Efficiency

? Power Down Mode

? 1500MHz to 2200MHz Operation

Typical Applications

? PCS Communication Systems

? Digital Communication Systems

? DECT Cordless Applications

? Commercial and Consumer Systems

? Portable Battery-Powered Equipment

產(chǎn)品屬性

  • 型號(hào):

    RF2125P

  • 制造商:

    RFMD

  • 制造商全稱:

    RF Micro Devices

  • 功能描述:

    HIGH POWER LINEAR AMPLIFIER

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