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RC28F128J3F75A
廠商型號

RC28F128J3F75A

功能描述

Numonyx? Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

文件大小

2.20301 Mbytes

頁面數(shù)量

66

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

MICRON鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-28 23:01:00

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RC28F128J3F75A規(guī)格書詳情

Introduction

This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 μs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx? Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

產(chǎn)品屬性

  • 型號:

    RC28F128J3F75A

  • 功能描述:

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    StrataFlash™

  • 標準包裝:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存儲器:

    RAM

  • 存儲器類型:

    SRAM - 異步

  • 存儲容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    2.2 V ~ 3.6 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    48-VFBGA

  • 供應商設備封裝:

    48-VFBGA(6x8)

  • 包裝:

    帶卷(TR)

供應商 型號 品牌 批號 封裝 庫存 備注 價格
MRON/鎂光
24+
NA/
1728
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
micron(鎂光)
24+
標準封裝
27048
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
詢價
MICRON
24+
BGA64
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
Micron
2020+
BGA
864
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
MICRON/鎂光
25+
BGA
996880
只做原裝,歡迎來電資詢
詢價
MICRON
18+
BGA64
2858
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
MICRON/美光
24+
NA
20000
美光專營原裝正品
詢價
INTEL/英特爾
21+
BGA
1709
詢價
MICRON/美光
22+
BGA
6000
進口原裝 假一罰十 現(xiàn)貨
詢價
micron(鎂光)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
詢價