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RC28F128J3F75A
廠商型號

RC28F128J3F75A

功能描述

Numonyx? Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC)

文件大小

2.20301 Mbytes

頁面數(shù)量

66

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

MICRON鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-9 12:20:00

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RC28F128J3F75A規(guī)格書詳情

Introduction

This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device features, operation, and specifications.

Unless otherwise indicated throughout the rest of this document, the Numonyx? Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) device is referred to as J3 65 nm SBC.

The J3 65 nm SBC device provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based 65 nm technology. Offered in 128-Mbit, 64-Mbit, and 32-Mbit densities, the J3 65 nm SBC device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation. The J3 65 nm SBC device takes advantage of proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging. Numonyx Flash Memory components also deliver a new generation of forward-compatible software support. By using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers can take advantage of density upgrades and optimized write capabilities of future Numonyx Flash Memory devices.

Product Features

■ Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

■ Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 μs per Byte Effective programming

time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

■ Security

— Enhanced security options for code

protection

— Absolute protection with VPEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

■ Software

— Program and erase suspend support

— Numonyx? Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

■ Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

產(chǎn)品屬性

  • 型號:

    RC28F128J3F75A

  • 功能描述:

    IC FLASH 128MBIT 75NS 64EZBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    StrataFlash™

  • 標(biāo)準(zhǔn)包裝:

    2,000

  • 系列:

    MoBL® 格式 -

  • 存儲器:

    RAM

  • 存儲器類型:

    SRAM - 異步

  • 存儲容量:

    16M(2M x 8,1M x 16)

  • 速度:

    45ns

  • 接口:

    并聯(lián)

  • 電源電壓:

    2.2 V ~ 3.6 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    48-VFBGA

  • 供應(yīng)商設(shè)備封裝:

    48-VFBGA(6x8)

  • 包裝:

    帶卷(TR)

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
INTEL/英特爾
22+
BGA
35175
原裝正品現(xiàn)貨
詢價
MICRON
24+
BGA
8640
MICRON專營原裝進(jìn)口現(xiàn)貨
詢價
MICRON/美光
24+
NA
20000
美光專營原裝正品
詢價
INTEL
22+
BGA
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
BGA
21+
MIC
12588
原裝正品,自己庫存 假一罰十
詢價
MICRON
24+
BGA64
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
INTEL
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
MICRON/鎂光
22+
BGA
20000
深圳原裝現(xiàn)貨正品有單價格可談
詢價
micron(鎂光)
2023+
N/A
4550
全新原裝正品
詢價
MICRON
最新
BGA
6800
全新原裝公司現(xiàn)貨低價
詢價