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RFPA1802

IntegratedPowerAmplifier1600MHzto2000MHz

RFMD

RF Micro Devices

RFPA1802SQ

IntegratedPowerAmplifier1600MHzto2000MHz

RFMD

RF Micro Devices

RFPA1802SR

IntegratedPowerAmplifier1600MHzto2000MHz

RFMD

RF Micro Devices

RFVC1802

WIDEBANDMMICVCOWITHBUFFERAMPLIFIER,4GHZTO8GHZ

RFMD

RF Micro Devices

RFVC1802SB

WidebandMMICVCOwithBufferAmplifier4GHzto8GHz

RFMD

RF Micro Devices

RFVC1802SQ

WidebandMMICVCOwithBufferAmplifier4GHzto8GHz

RFMD

RF Micro Devices

RFVC1802SR

WidebandMMICVCOwithBufferAmplifier4GHzto8GHz

RFMD

RF Micro Devices

ST1802FH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectorTechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWFullyPlasticTO-220forHIGHVOLTAGEAPPLICATIONS ■NEWSERIES,ENHANCHEDPERFORMANCE ■EASYMOUNTING ■HI

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

ST1802FX

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

Description TheST1802FXismanufacturedusingnewDiffusedCollectorTechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. Features ■NEWSERIES,ENHANCEDPERFORMANCE ■FULLYINSULATEDPOWERPACKAGE(U.L.COMPLIANT)FOREASYMOUNTI

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

ST1802HI

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectorTechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCHEDPERFORMANCE ■FULLYINSULATEDPACKAGEFOREASYMOUNTING ■HIGHVOLTAGECAPABILITY ■HIGH

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD1802

LOWVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Verylowcollectortoemittersaturationvoltage ■Highcurrentgaincharacteristic ■Fa

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD1802

Lowvoltagefast-switchingNPNpowertransistor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STD1802

iscSiliconNPNPowerTransistor

DESCRIPTION ?LowCollector-EmitterSaturationVoltage- :VCE(sat)=0.4V(Max)(IC=3A;IB=0.15A) ?DCCurrentGain-hFE=100(Min)@IC=3A ?Fast-Switchingspeed ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?CCFLdirvers ?Volt

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STN1802

HIGHCURRENTGAINCHARACTERISTIC

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

TA1802AM

Wireless,RFSAWFilter

Transko

Transko Electronics, Inc.

TED1802

SILICONPNPEPITAXIALTYPE(PCTPROCESS)

UDIOPOWERAMPLIFIAERAPPLICATIONS. FEATURES .HighhpE:hFE=106~300 .1WOutputApplications. .ComplementarytoTED1702.

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TM1802

SinglewayLED

PTHShenzhen Putianhe Technology Co., Ltd

普天和深圳市普天和科技公司

UCC1802

Low-PowerBiCMOSCurrent-ModePWM

TITexas Instruments

德州儀器美國德州儀器公司

UCC1802

Low-PowerBiCMOSCurrent-ModePWMControllers

TI1Texas Instruments

德州儀器

UCC1802

Low-PowerBiCMOSCurrent-ModePWMControllers

TI1Texas Instruments

德州儀器

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MMI
18+
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200
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66800
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MMI
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1736
11200
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UDE
2021+
DIP/SOP
16500
十年專營原裝現(xiàn)貨,假一賠十
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UDE
23+
6540
只做原裝正品現(xiàn)貨或者訂貨假一賠十!
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UDE
2021+
RJ45
100500
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UDE
23+
RJ45
89630
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UDE
2016+
RJ45
8850
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UDE
1736+
RJ45
15238
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更多RB1802供應商 更新時間2025-1-7 14:15:00

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