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PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description ThePTFC210202FCintegratestwoindependent10-wattLDMOSFETsand isdesignedforuseincellularamplifierapplicationsinthe2110to2170 MHzfrequencyband.ManufacturedwithWolfspeed'sadvancedLDMOS process,thisdeviceprovidesexcellentthermalperformanceandsuperior r

WOLFSPEED

WOLFSPEED, INC.

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz

CreeCree, Inc

科銳

PTFC210202FC

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FC-V1

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description ThePTFC210202FCintegratestwoindependent10-wattLDMOSFETsand isdesignedforuseincellularamplifierapplicationsinthe2110to2170 MHzfrequencyband.ManufacturedwithWolfspeed'sadvancedLDMOS process,thisdeviceprovidesexcellentthermalperformanceandsuperior r

WOLFSPEED

WOLFSPEED, INC.

PTFC210202FC-V1-R0

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description ThePTFC210202FCintegratestwoindependent10-wattLDMOSFETsand isdesignedforuseincellularamplifierapplicationsinthe2110to2170 MHzfrequencyband.ManufacturedwithWolfspeed'sadvancedLDMOS process,thisdeviceprovidesexcellentthermalperformanceandsuperior r

WOLFSPEED

WOLFSPEED, INC.

PTFC210202FC-V1-R250

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

Description ThePTFC210202FCintegratestwoindependent10-wattLDMOSFETsand isdesignedforuseincellularamplifierapplicationsinthe2110to2170 MHzfrequencyband.ManufacturedwithWolfspeed'sadvancedLDMOS process,thisdeviceprovidesexcellentthermalperformanceandsuperior r

WOLFSPEED

WOLFSPEED, INC.

PTFC210202FC_16

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FCV1R0

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FCV1R0XTMA1

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FCV1R250

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FCV1R250XTMA1

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFC210202FC-V1-R0

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：H-37248-4 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS H-37248-4

WOLFSPEED

WOLFSPEED, INC.

PTFC210202FC-V1-R250

包裝：散裝 封裝/外殼：H-37248-4 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

WOLFSPEED

WOLFSPEED, INC.

PTFC210202FCV1XWSA1

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：H-37248-4 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價(jià)
INFINEON
23+
原廠原封□□□
20000
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
24+
244
現(xiàn)貨供應(yīng)
 詢價(jià)
INFINEON/英飛凌
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
INFINEON
23+
19+
8000
只做原裝現(xiàn)貨
 詢價(jià)
Infineon Technologies
21+
H-37248-4
20000
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營)!
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
INFINEON
1503+
H-37248-4
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Infineon Technologies
22+
H372484
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多PTFC210202FC供應(yīng)商 更新時(shí)間2024-12-26 10:30:00

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