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PTFB201402FC

High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithWolfspeed’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

CreeCree, Inc

科銳

PTFB201402FC

High Power RF LDMOS Field Effect Transistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFB201402FCV1R0

High Power RF LDMOS Field Effect Transistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFB201402FCV1R0XTMA1

High Power RF LDMOS Field Effect Transistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFB201402FCV1R250

High Power RF LDMOS Field Effect Transistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFB201402FCV1R250XTMA1

High Power RF LDMOS Field Effect Transistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PTFB201402FC-V1-R0

包裝：卷帶（TR） 封裝/外殼：H-37248-4 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：140W, SI LDMOS, 28V, 2010-2025MH

WOLFSPEED

WOLFSPEED, INC.

PTFB201402FC-V1-R250

包裝：卷帶（TR） 封裝/外殼：H-37248-4 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC AMP RF LDMOS

WOLFSPEED

WOLFSPEED, INC.

A201402CAAB

SingleRowTerminalBlocks

EATONEaton All Rights Reserved.

伊頓伊頓公司

A201402WRAB

SingleRowTerminalBlocks

EATONEaton All Rights Reserved.

伊頓伊頓公司

T201402

ALLDIMENSIONSINMM[INCH]

E-SWITCH

E-switch

詳細(xì)參數(shù)

  • 型號：

    PTFB201402FC

  • 功能描述：

    射頻MOSFET電源晶體管 RFP-LDMOS 9

  • RoHS：

    否

  • 制造商：

    Freescale Semiconductor

  • 配置：

    Single

  • 頻率：

    1800 MHz to 2000 MHz

  • 增益：

    27 dB

  • 輸出功率：

    100 W

  • 封裝/箱體：

    NI-780-4

  • 封裝：

    Tray

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
1844+
NA
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
INF/ERICSSON
24+
H-37248-4
100000
原裝正品現(xiàn)貨
 詢價
INFINEON/英飛凌
22+
NA
10500
只有原裝 低價 實單必成
 詢價
INF/ERICSSON
2022+
H-37248-4
57550
詢價
INFINEON
23+
NA
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
NA
7000
詢價
INFINEON
2310+
NA
3886
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
INFINEON
1809+
H-37248-4
26
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
更多PTFB201402FC供應(yīng)商 更新時間2025-1-13 18:07:00

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