PTFA220041M

High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

Description ThePTFA220041Misanunmatched4-wattLDMOSFETintendedforpoweramplifierapplicationsinthe700MHzto2200MHzoperatingrange.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmall,overmoldedplasticpackage. Features ?Typicaltwo-carrier

PTFA220041M

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

PTFA220041M_16

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

PTFA220041MV4R1K

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

PTFA220041MV4R1KXUMA1

High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 ??2200 MHz

PTFA220041M-V4

Package：10-LDFN 裸露焊盤(pán)；包裝：散裝 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF LDMOS 4W SON10

PTFA220041M-V4-R1K

包裝：散裝 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET TRANSISTORS