PTB23001X中文資料飛利浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書
PTB23001X規(guī)格書詳情
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
FEATURES
? Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
? Interdigitated structure provides high emitter efficiency
? Multicell geometry gives good balance of dissipated power and low thermal resistance
? Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BENDIX |
新 |
2 |
全新原裝 貨期兩周 |
詢價 | |||
ERICSSON/愛立信 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
N/A |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
AMPHENOL |
20+ |
連接器 |
48 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ERICSSON/愛立信 |
24+ |
299 |
現(xiàn)貨供應(yīng) |
詢價 | |||
ERICSSON/愛立信 |
23+ |
TO-59 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 |
