PTB20111中文資料愛立信數據手冊PDF規(guī)格書
PTB20111規(guī)格書詳情
Description
The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.
? 25 Volt, 860–900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50 at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
? Class AB Characteristics
? Gold Metallization
? Silicon Nitride Passivated
產品屬性
- 型號:
PTB20111
- 功能描述:
射頻放大器 RF Bipolar Trans
- RoHS:
否
- 制造商:
Skyworks Solutions, Inc.
- 類型:
Low Noise Amplifier
- 工作頻率:
2.3 GHz to 2.8 GHz
- P1dB:
18.5 dBm
- 輸出截獲點:
37.5 dBm
- 功率增益類型:
32 dB
- 噪聲系數:
0.85 dB
- 工作電源電壓:
5 V
- 電源電流:
125 mA
- 測試頻率:
2.6 GHz
- 最大工作溫度:
+ 85 C
- 安裝風格:
SMD/SMT
- 封裝/箱體:
QFN-16
- 封裝:
Reel
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
原廠封裝 |
7936 |
詢價 | |||
ERICSSON |
24+ |
MODULE |
2175 |
公司大量現貨 隨時可以發(fā)貨 |
詢價 | ||
ERICSSON/愛立信 |
19+ |
MODULE |
1290 |
主打模塊,大量現貨供應商QQ2355605126 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
ERICSSON |
24+ |
800 |
詢價 | ||||
INFINEON |
23+ |
2015+ |
7000 |
詢價 | |||
INFINEON/英飛凌 |
2022+ |
NA |
57550 |
詢價 | |||
23+ |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||||
ERICSSON |
23+ |
TO-62 |
3200 |
專營高頻管模塊,全新原裝! |
詢價 | ||
INFINEON |
22+ |
高頻管 |
350 |
十七年VIP會員,誠信經營,一手貨源,原裝正品可零售! |
詢價 |