1. Description

The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter

applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between

the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI

(Common Mode Transient Immunity) performance over 150 V/ns, providing reliable communication and

increased noise immunity while meeting the high voltages and fast switching speeds required in inverter

systems.

This device contains Gate drive circuit, Miller clamp circuit, and Soft turn-off circuit as well as several types

of protection circuits such as Overcurrent detection.

Features

On-chip Micro Isolator (isolated circuit)

? High voltage isolation: 3750Vrms, 1min

? High CMTI (Common Mode Transient Immunity): over 150V/ns

High output gate drive circuit

? Gate drive output peak current (Source / Sink): 10A typ. / 10A typ.

? On-chip active miller clamp

? Soft turn-off function

Various on-chip protection circuits

? Over current detection by DESAT (Desaturation Protection): 8.9V typ.

? On-chip under voltage lockout circuit (UVLO)

VCC1 (5 V system): 4.1V typ.

VCC2 (15 V system): 10V typ.

? Fault Alarm outputs on FOB pin and the latched fault status can be reset by RSTB pin

Operating temperature: - 40 to 125 °C (Junction temperature: 150 °C max)

AEC-Q100 Qualified (Grade 1)

Applications

Traction inverters for EV/HEV in automotive applications

DC-DC converters for EV/HEV in automotive applications

On-board charger for EV in automotive applications

Inverters and converters for industrial instruments, etc.

Note: The information contained in this document is the one that was obtained when the

document was issued and may be subject to change.