| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PPR-3055B | 包裝：散裝 類別：五金件，緊固件，配件 鉚釘 描述：RIVET PUSH 0.220\ | EssentraEssentra Components 益升華益升華貿(mào)易(寧波)有限公司 | Essentra | |
MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
100WS-BandGaNPowerAmplifier | QORVO Qorvo, Inc | QORVO | ||
SILICONN-P-NVERSAWATTTRANSISTORS SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications | GESS GE Solid State | GESS | ||
SILICONN-P-NVERSAWATTTRANSISTORS High-Current,SiliconN-P-NVERSAWATTTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS Harris Corporation | HARRIS | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | Intersil Intersil Corporation | Intersil | ||
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | Intersil Intersil Corporation | Intersil | ||
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=60V,ID=50A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip |
產(chǎn)品屬性
- 產(chǎn)品編號：
PPR-3055B
- 制造商：
Essentra Components
- 類別：
五金件，緊固件，配件 > 鉚釘
- 系列：
Richco, PPR
- 包裝：
散裝
- 類型：
推入式鉚釘
- 鉚釘長度：
0.220"（5.59mm）
- 頭部直徑：
0.230"（5.84mm）
- 頭部高度：
0.080"（2.03mm）
- 孔徑：
0.122"（3.10mm）
- 抓握范圍：
0.120" ~ 0.160"（3.05mm ~ 4.06mm）
- 顏色：
黑色
- 材料：
尼龍
- 描述：
RIVET PUSH 0.220\
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Richco |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
Richco |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
Essentra |
22+ |
NA |
2435 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
EDI |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
MICROSEMI |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號增稅票 |
詢價 | ||
MICROSEMI |
24+ |
MODULE |
2100 |
公司大量全新現(xiàn)貨 隨時可以發(fā)貨 |
詢價 | ||
ESSENTRA |
23+ |
652903 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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