PMXB120EPE中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

? Trench MOSFET technology

? Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

? Exposed drain pad for excellent thermal conduction

? ElectroStatic Discharge (ESD) protection 1 kV HBM

? Drain-source on-state resistance RDSon = 100 mΩ

3. Applications

? High-side load switch and charging switch for portable devices

? Power management in battery driven portables

? LED driver

? DC-to-DC converter