首頁(yè) >PJM03N60SQ>規(guī)格書列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PJM03N60SQ | N- Enhancement Mode Field Effect Transistor | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司 | PJSEMI | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFETFeatures | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社 | Fuji | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RC-DriveandRC-DriveFast | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptimizedEon,EoffandQrrforlowswitchinglosses | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
平晶微 |
1年內(nèi) |
SOT-89 |
50000 |
原廠FAE技術(shù)支持 共奕芯城一站式電子元器件采購(gòu)平臺(tái)支 |
詢價(jià) | ||
PJSEMI |
23+ |
NA |
517 |
P型場(chǎng)效應(yīng)管 |
詢價(jià) | ||
24+ |
N/A |
53000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |
相關(guān)規(guī)格書
更多- PJM05P30PA
- PJM07P20SC
- PJM100H02NTE
- PJM10H02NSA
- PJM10H03NSC
- PJM10H13PSQ
- PJM10H15NSQ
- PJM10N30PA
- PJM138NSA
- PJM1514NDJ
- PJM2035PSA
- PJM20H02NSC
- PJM2300NSA-S
- PJM2301PSA-S
- PJM2302NSA-S
- PJM2303PSA
- PJM2306NSA
- PJM2309PSA
- PJM2310NSA
- PJM2321PSA
- PJM2333PSA
- PJM25H08NTF
- PJM26000S12
- PJM30P30DI
- PJM3400NSA
- PJM3401PSA
- PJM3402NSA
- PJM3404NSA
- PJM3404NSQ
- PJM3407PSA
- PJM3413PSA
- PJM3415PSA-4K
- PJM3416NSA
- PJM3416NSC
- PJM3422NSA
- PJM36000S12
- PJM36060U31C
- PJM36120U44A
- PJM40H10NTC
- PJM50H30NTH
- PJM50N60TE
- PJM6050NTK
- PJM60H07NTF
- PJM60H12MNSA
- PJM65H07NTF
相關(guān)庫(kù)存
更多- PJM07P20SA
- PJM08P40TE
- PJM10H01PSA
- PJM10H03NSA
- PJM10H05NST
- PJM10H14NPA
- PJM10H180NTC
- PJM123NSA
- PJM150N80TC
- PJM1516NDJ
- PJM204A5DPPA
- PJM2300NSA
- PJM2301PSA
- PJM2302NSA
- PJM2302NSC
- PJM2304NSA
- PJM2307PSA
- PJM2309PSC
- PJM2319PSA
- PJM2324NSA
- PJM2333PSC
- PJM25H14NTF
- PJM3018NSA
- PJM3222DNSG
- PJM3400NSC
- PJM3401PSC
- PJM3402NSC
- PJM3404NSC
- PJM3407BPSA
- PJM3407PSC
- PJM3415PSA
- PJM3415PSC
- PJM3416NSA-AP
- PJM3420NSA
- PJM35N30DI
- PJM36000S80
- PJM36100U31A
- PJM4006NSA
- PJM50H20NTF
- PJM50N30DJ
- PJM6025NTD
- PJM60H04NTF
- PJM60H10NTF
- PJM65H04NTF
- PJM65H12NTF
