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RFG40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFG40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFG40N10LE

40A,100V,0.040Ohm,LogicLevelN-ChannelPowerMOSFETs

Intersil

Intersil Corporation

RFP40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP40N10

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

RFP40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFP40N10LE

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

RFP40N10LE

40A,100V,0.040Ohm,LogicLevelN-ChannelPowerMOSFETs

Intersil

Intersil Corporation

SMP40N10

N-ChannelEnhancement-ModeTransistor

N-ChannelEnhancement-ModeTransistor

Temic

TEMIC Semiconductors

SSD40N10J

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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