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RFP3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFP3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFP3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

RFT3055

2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET

ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato

Intersil

Intersil Corporation

RFT3055LE

2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET

ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato

Intersil

Intersil Corporation

RJP3055DPP

PowerMOSFETsandIGBTforPDP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RK3055

Smallswitching(60V,8A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive. 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel. Structure SiliconN-channelMOSFET

ROHMRohm

羅姆羅姆半導體集團

RK3055E

10VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導體集團

RK3055E

Smallswitching(60V,8A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive. 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel. Structure SiliconN-channelMOSFET

ROHMRohm

羅姆羅姆半導體集團

詳細參數(shù)

  • 型號：

    PHP3055

  • 功能描述：

    MOSFET RAIL PWRMOS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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NXP
23+
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11846
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NXP
1822+
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9852
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NXP
18+
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41200
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NXP/恩智浦
22+
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6000
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NXP/恩智浦
23+
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6000
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PHI
2023+
TO-220
5800
進口原裝,現(xiàn)貨熱賣
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NXP/恩智浦
22+
TO-220
25000
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NXP/恩智浦
22+
TO-220
90153
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NXP
25+
TO-TO-220
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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PH
24+
SOT78TO-220AB
8866
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更多PHP3055供應商 更新時間2025-5-6 15:08:00

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