首頁 >PHP23NQ10LT>規(guī)格書列表
PHB23NQ10T
文件:345.09 Kbytes
Page:2 Pages
iscN-ChannelMOSFETTransistor
FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=72mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl
ISCInchange Semiconductor Company Limited
無錫固電無錫固電半導(dǎo)體股份有限公司
ISC
文件:99.37 Kbytes
Page:12 Pages
N-channelTrenchMOStransistor
GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.tod.c.converters ?switchedmodepowers
PhilipsPhilips Semiconductors
飛利浦荷蘭皇家飛利浦
Philips
PHD23NQ10T
文件:299.37 Kbytes
PHP23NQ10T
文件:372.08 Kbytes
PHX23NQ10T
文件:61.65 Kbytes
Page:8 Pages
GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticfullpackenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching Applications:- ?d.c.tod.c.converters ?switchedmodepowersupplies ?T.V.
Tel:0755 8246 9263
Email:kf@114ic.com
投訴建議:kf@114ic.com
Copyright ? 2003-2025 114ic.com All Rights Reserved 粵ICP備05011613號(hào) 粵公網(wǎng)安備 44030402000933號(hào)