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| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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DualN-channelTrenchMOSstandardlevelFET 1.1Generaldescription DualstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefit | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
DualN-channelTrenchMOStransistor GENERALDESCRIPTION DualN-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES ?Dualdevice ?Lowon-stateresistance ?Fastswitching ?Lowprofilesurfacemountpackage Applications:- ?Motorandrelaydrivers ?d.c.tod.c.conver | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
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