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PHD11N03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD11N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD12N10E

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplication

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD12N10E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD12NQ15T

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES ?’Trench’technology ?

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD12NQ15T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD13003C

NPN power transistor with integrated diode

Generaldescription Highvoltage,highspeed,planarpassivatedNPNpowerswitchingtransistorwithintegratedanti-parallelemitter-collectordiodeinaSOT54(TO-92)plasticpackage. Featuresandbenefits ?HightypicalDCcurrentgain ?Fastswitching ?Highvoltagecapability ?Integrate

WEENWeEn Semiconductors

瑞能半導(dǎo)體瑞能半導(dǎo)體科技股份有限公司

PHD13005

NPN power transistor with integrated diode

Generaldescription Highvoltage,highspeed,planarpassivatedNPNpowerswitchingtransistorwithintegratedanti-parallelE-CdiodeinaSOT78(TO-220AB)plasticpackage. Featuresandbenefits ?Lowthermalresistance ?Fastswitching ?Highvoltagecapability ?Integratedanti-parallelE

WEENWeEn Semiconductors

瑞能半導(dǎo)體瑞能半導(dǎo)體科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    PHD

  • 制造商：

    ITT

  • 制造商全稱：

    ITT Industries

  • 功能描述：

    Fiber Optics

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
PHI
05+
原廠原裝
5051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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恩XP
1415+
TO-252
28500
全新原裝正品,優(yōu)勢(shì)熱賣
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PHI
11+
SOT252
5000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨
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恩XP
13+
15039
原裝分銷
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PHI
23+
TO252
12300
詢價(jià)
恩XP
TO252
5000
正品原裝--自家現(xiàn)貨-實(shí)單可談
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24+
QFP
68
真實(shí)現(xiàn)貨庫存
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PHI
24+
SOT-263
4897
絕對(duì)原裝!現(xiàn)貨熱賣!
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恩XP
23+
SOT428
48100
原裝正品,假一罰十
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PHI
2020+
SOT428
64
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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更多PHD供應(yīng)商 更新時(shí)間2025-7-8 16:11:00

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