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首頁(yè)>PHB33NQ20T>詳情
PHB33NQ20T_PHOENIX/菲尼克斯電氣_MOSFET TRENCHMOS一線半導(dǎo)體3部
- 詳細(xì)信息
- 規(guī)格書(shū)下載
原廠料號(hào):PHB33NQ20T品牌:PH
- 芯片型號(hào):
PHB33NQ20T
- 規(guī)格書(shū):
- 內(nèi)容頁(yè)數(shù):
12 頁(yè)
- 文件大?。?/span>
191.06 kb
- 資料說(shuō)明:
N-channel TrenchMOS standard level FET
產(chǎn)品屬性
- 類(lèi)型
描述
- 型號(hào):
PHB33NQ20T
- 功能描述:
MOSFET TRENCHMOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
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