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    首頁>PF38F5070M0R1V0>規(guī)格書詳情

    PF38F5070M0R1V0中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書

    PF38F5070M0R1V0
    廠商型號

    PF38F5070M0R1V0

    功能描述

    StrataFlash? Cellular Memory

    文件大小

    2.1332 Mbytes

    頁面數(shù)量

    139

    生產(chǎn)廠商 numonyx
    企業(yè)簡稱

    NUMONYX

    中文名稱

    numonyx官網(wǎng)

    原廠標識
    數(shù)據(jù)手冊

    下載地址一下載地址二

    更新時間

    2025-6-12 23:00:00

    人工找貨

    PF38F5070M0R1V0價格和庫存,歡迎聯(lián)系客服免費人工找貨

    PF38F5070M0R1V0規(guī)格書詳情

    Introduction

    This datasheet contains information about the Numonyx? Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.

    Product Features

    ? High Performance Read-While-Write/Erase

    — Burst frequency at 66 MHz (zero wait states)

    —60ns Initial access read speed

    — 11 ns Burst mode read speed

    — 20 ns Page mode read speed

    — 4-, 8-, 16-, and Continuous-Word Burst mode reads

    — Burst and Page mode reads in all Blocks, across all partition boundaries

    — Burst Suspend feature

    — Enhanced Factory Programming at 3.1 μs/word ?

    Security

    —128-BitOTP Protection Register:

    64 unique pre-programmed bits + 64 user-programmable bits

    — Absolute Write Protection with VPP at ground

    — Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability?

    Quality and Reliability

    —Temperature Range:–40 °C to +85 °C

    — 100K Erase Cycles per Block

    — 90 nm ETOX? IX Process

    — 130 nm ETOX? VIII Process

    Architecture

    — Multiple 4-Mbit partitions

    — Dual Operation: RWW or RWE

    — Parameter block size = 4-Kword

    — Main block size = 32-Kword

    — Top or bottom parameter devices

    —16-bit wide data bus

    Software

    — 5 μs (typ.) Program and Erase Suspend latency time

    — Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible

    — Programmable WAIT signal polarity

    Packaging and Power

    — 90 nm: 32- and 64-Mbit in VF BGA

    — 130 nm: 32-, 64-, and 128-Mbit in VF BGA

    — 130 nm: 128-Mbit in QUAD+ package

    — 56 Active Ball Matrix, 0.75 mm Ball-Pitch

    —VCC= 1.70 V to 1.95 V

    —VCCQ(90 nm) = 1.7 V to 1.95 V

    —VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V

    —VCCQ(130 nm) = 1.35 V to 2.24 V

    — Standby current (130 nm): 8 μA (typ.)

    — Read current: 8 mA (4-word burst, typ.)

    產(chǎn)品屬性

    • 型號:

      PF38F5070M0R1V0

    • 制造商:

      NUMONYX

    • 制造商全稱:

      Numonyx B.V

    • 功能描述:

      StrataFlash㈢ Cellular Memory

    供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
    INTEL/英特爾
    24+
    NA/
    50
    優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
    詢價
    INTEL
    24+
    BGA
    80000
    只做自己庫存,全新原裝進口正品假一賠百,可開13%增
    詢價
    INTEL
    24+
    BGA
    3000
    只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
    詢價
    INTEL
    1741+
    BGA
    6528
    只做進口原裝正品假一賠十!
    詢價
    INTEL/英特爾
    23+
    FBGA
    15000
    一級代理原裝現(xiàn)貨
    詢價
    INTEL
    23+
    BGA
    124
    原裝現(xiàn)貨假一賠十
    詢價
    INTEL
    24+
    FBGA107
    2568
    原裝優(yōu)勢!絕對公司現(xiàn)貨
    詢價
    INTEL
    24+
    BGA
    5000
    全新原裝正品,現(xiàn)貨銷售
    詢價
    INTEL
    19+
    BGA
    256800
    原廠代理渠道,每一顆芯片都可追溯原廠;
    詢價
    INTEL
    22+
    FBGA107
    5000
    全新原裝現(xiàn)貨!價格優(yōu)惠!可長期
    詢價