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CEB6086

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=70A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

CEB6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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更多PE6086供應商 更新時間2025-3-12 17:06:00

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