PDRV8329AREER中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

1 Features

? 65-V Three Phase Half-Bridge Gate Driver

– Drives 3 High-Side and 3 Low-Side N-Channel

MOSFETs (NMOS)

– 4.5 to 60-V Operating Voltage Range

– Supports 100 PWM Duty Cycle with Trickle

Charge pump

? Bootstrap based Gate Driver Architecture

– 1000-mA Maximum Peak Source Current

– 2000-mA Maximum Peak Sink Current

? Integrated Current Sense Amplifier with low input

offset (optimized for 1 shunt)

– Adjustable Gain (5, 10, 20, 40 V/V)

? Hardware interface provides simple configuration

? Ultra-low power sleep mode <1 uA at 25 ?C

? 4-ns (typ) propagation delay matching between

phases

? Independent driver shutdown path (DRVOFF)

? 65-V tolerant wake pin (nSLEEP)

? Supports negative transients upto -10V on SHx

? 6x and 3x PWM Modes

? Supports 3.3-V, and 5-V Logic Inputs

? Accurate LDO (AVDD), 3.3 V ±3, 80 mA

? Compact QFN Packages and Footprints

? Adjustable VDS overcurrent threshold through

VDSLVL pin

? Adjustable deadtime through DT pin

? Efficient System Design With Power Blocks

? Integrated Protection Features

– PVDD Undervoltage Lockout (PVDDUV)

– GVDD Undervoltage (GVDDUV)

– Bootstrap Undervoltage (BST_UV)

– Overcurrent Protection (VDS_OCP, SEN_OCP)

– Thermal Shutdown (OTSD)

– Fault Condition Indicator (nFAULT)

2 Applications

? Brushless-DC (BLDC) Motor Modules and PMSM

? Cordless Garden and Power Tools, Lawnmowers

? Appliances Fans and Pumps

? Servo Drives

? E-Bikes, E-Scooters, and E-Mobility

? Cordless Vacuum Cleaners

? Drones

? Industrial & Logistics Robots, and RC Toys

3 Description

The DRV8329 family of devices is an integrated

gate driver for three-phase applications. The devices

provide three half-bridge gate drivers, each capable

of driving high-side and low-side N-channel power

MOSFETs. The device generates the correct gate

drive voltages using an internal charge pump and

enhances the high-side MOSFETs using a bootstrap

circuit. A trickle charge pump is included to support

100 duty cycle. The Gate Drive architecture

supports peak gate drive currents up to 1-A source

and 2-A sink. The DRV8329 can operate from a single

power supply and supports a wide input supply range

of 4.5 to 60 V.

The 6x and 3x PWM modes allow for simple

interfacing to controller circuits. The device has

integrated accurate 3.3-V LDO that can be used

to power external controller and can be used as

reference for CSA. The configuration settings for the

device are configurable through hardware (H/W) pins.

The DRV8329 devices integrate low-side current

sense amplifier that allow current sensing for sum of

current from all three phases of the drive stage.

A low-power sleep mode is provided to achieve

low quiescent current by shutting down most of

the internal circuitry. Internal protection functions

are provided for undervoltage lockout, GVDD fault,

MOSFET overcurrent, MOSFET short circuit, and

overtemperature. Fault conditions are indicated on

nFAULT pin.