PD55003STR-E分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

PD55003STR-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的PD55003STR-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V

Description

The PD55003-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies of up to 1 GHz. The PD55003 boasts

excellent gain, linearity and reliability thanks to

ST’s latest LDMOS technology mounted in the

first true SMD plastic RF power package, the

PowerSO-10RF.

The PD55003’s superior linearity performance

makes it an ideal solution for car mobile radios.

The PowerSO-10RF plastic package is designed

for high reliability, and is the first JEDECapproved,

high power SMD package from ST. It

has been optimized for RF requirements and

offers excellent RF performance and ease of

assembly.

Mounting recommendations are provided in

application note AN1294, available on