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PDI-E837

GaAlAsHighpowerIRLEDEmitters(660nm/880nm)

ADVANCEDPHOTONIX

Advanced Photonix, Inc.

R837B

Pushbuttonswitch,pushtolock

APEX-ELECTRONICS

Apex Electronics Co., Ltd

T-837

FlybackTransformer

RHOMBUS-IND

Rhombus Industries Inc.

TDA837X

I2C-buscontrolledeconomyPAL/NTSCandNTSCTV-processors

FEATURES AvailableinallICs: ·VisionIFamplifierwithhighsensitivityandgoodfigures fordifferentialphaseandgain ·PLLdemodulatorfortheIFsignal ·Alignment-freesounddemodulator ·FlexiblesourceselectionwithaCVBSinputforthe internalsignalandY/CorCVBSinputfor

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

UPA837TF

NPNSILICONEPITAXIALTWINTRANSISTOR

DESCRIPTION TheUPA837TFcontainsoneNE686andoneNE688NPNhighfrequencysiliconbipolarchip.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicationswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilycon

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

VSC837

3.2Gb/s68x68CrosspointSwitch

GeneralDescription TheVSC837isamonolithic68x68asynchronouscrosspointswitch,designedtocarrybroadbanddatastreams.Thenon-blockingswitchcoreisprogrammedthroughatriple-modeportinterfacethatallowsrandomaccessprogrammingofeachinput/outputport.Ahighdegreeofsignali

VITESSE

Vitesse Semiconductor Corporation

VSC837UG

3.2Gb/s68x68CrosspointSwitch

GeneralDescription TheVSC837isamonolithic68x68asynchronouscrosspointswitch,designedtocarrybroadbanddatastreams.Thenon-blockingswitchcoreisprogrammedthroughatriple-modeportinterfacethatallowsrandomaccessprogrammingofeachinput/outputport.Ahighdegreeofsignali

VITESSE

Vitesse Semiconductor Corporation

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