PC100電纜電線-管理的電纜支撐與緊固件規(guī)格書PDF中文資料

GENERAL DESCRIPTION

The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The KMM366S1623CT is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURE

? Performance range

? Burst mode operation

? Auto & self refresh capability (4096 Cycles/64ms)

? LVTTL compatible inputs and outputs

? Single 3.3V ± 0.3V power supply

? MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the

system clock

? Serial presence detect with EEPROM

? PCB : Height (1,375mil), double sided component