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PBRP123ET

PNP800mA,40VBISSRET;R1=2.2kW,R2=2.2kW

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRP123ET

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123ET-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123YT

PNP800mA,40VBISSRET;R1=2.2kW,R2=10kW

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRP123YT

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRP123YT-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturatio

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PC123

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

PC123

EuropeanSafetyStandardApprovedTypeLongCreepageDistancePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

PC123A

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

PC123B

DIP4pinReinforcedInsulationTypePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

詳細參數(shù)

  • 型號:

    PBRP123ES AMO

  • 功能描述:

    開關晶體管 - 偏壓電阻器 BISS RETS

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
NXP USA Inc.
24+
TO-226-3 TO-92-3(TO-226AA)
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
NXP
24+
SOT-23
5000
只做原裝公司現(xiàn)貨
詢價
NXP
1735+
SOT23
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
詢價
NXP
24+
SOT-23
25000
一級專營品牌全新原裝熱賣
詢價
NXP
21+
SOT-23
12588
原裝正品,自己庫存 假一罰十
詢價
NEXPERIA
23+
SOT23
51000
原裝正品現(xiàn)貨
詢價
NXP
2020+
SOT-23
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
NEXPERIA/安世
2021+
SOT23
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
NXP/恩智浦
21+
SOT-23
3000
原裝現(xiàn)貨假一賠十
詢價
NEXPERIA/安世
23+
SOT23
6000
原裝正品假一罰百!可開增票!
詢價
更多PBRP123ES AMO供應商 更新時間2025-1-17 14:08:00