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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
P50N06C	文件：1.12852 Mbytes Page：6 Pages	50A,60V Heatsink Planar N-Channel Power MOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
P50N06C	文件：1.482 Mbytes Page：7 Pages	50A,60V Heatsink Planar N-Channel Power MOSFETs	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
P50N06C_V01	文件：1.482 Mbytes Page：7 Pages	50A,60V Heatsink Planar N-Channel Power MOSFETs	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
P50N06PA	文件：980.12 Kbytes Page：7 Pages	N-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
PHB50N06	文件：69.19 Kbytes Page：8 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB50N06	文件：55.73 Kbytes Page：8 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP50N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB50N06LT	文件：55.73 Kbytes Page：8 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP50N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB50N06LT	文件：80.78 Kbytes Page：10 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP50N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB50N06LT	文件：343.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
PHB50N06T	文件：69.19 Kbytes Page：8 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB50N06T	文件：343.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
PHD50N06LT	文件：80.78 Kbytes Page：10 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP50N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHD50N06LT	文件：249.34 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
PHP50N06	文件：1.28747 Mbytes Page：6 Pages	50A,60VHeatsinkPlanarN-ChannelPowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
PHP50N06	文件：54.43 Kbytes Page：7 Pages	PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope. ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andinautomotiveandgeneralpurposeswitchingapplications.	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHP50N06LT	文件：80.78 Kbytes Page：10 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP50N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHP50N06T	文件：1.28747 Mbytes Page：6 Pages	50A,60VHeatsinkPlanarN-ChannelPowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
RFG50N06	文件：375.54 Kbytes Page：8 Pages	50A,60V,0.022Ohm,N-ChannelPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFG50N06	文件：74.26 Kbytes Page：8 Pages	50A,60V,0.022Ohm,N-ChannelPowerMOSFETs TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg	Intersil Intersil Corporation	Intersil
RFG50N06LE	文件：412.33 Kbytes Page：8 Pages	50A,60V,0.022Ohm,LogicLevelN-ChannelPowerMOSFETs TheseN-ChannelenhancementmodepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市威爾健半導(dǎo)體有限公司	P50N06FI	NEXPERIA/安世	23+	SOD128	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	P50N06FI	ST/意法	23+	TO-220	10000	公司只做原裝正品	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	P50N06FI	ST		TO-220	93480	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳和潤(rùn)天下電子科技有限公司	P50N06FI	ST/意法	22+	TO-220	96253		詢價(jià)
深圳市宏捷佳電子科技有限公司	P50N06FI	ST	24+	TO-TO-220	35400	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	P50N06L	ST/進(jìn)口原	17+	TO-220	6200		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	P50N06VL	MOTOROLA	2016+	TO220	6528	只做進(jìn)口原裝現(xiàn)貨!假一賠十!	詢價(jià)
深圳市鵬和科技有限公司	P50N06VL	MOTOROLA	24+	TO220	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市澳億芯電子科技有限公司	P50N06VL	MOTOROLA	97+	TO220	226	現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	P50N06VL	MOTOROLA/摩托羅拉	23+	TO220	63820	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多P50N06C供應(yīng)商更新時(shí)間2025-1-11 11:00:00

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