零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.067ohmtyp.,35AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=78mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter, | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.067ohmtyp.,35AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ?DrainCurrent–ID=35A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=78mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,35A,0.067廓typ.,MDmesh??VPowerMOSFETsinTO-3PF,TO-247andTO-247longleadspackages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.075廓typ.,22.5AMDmesh??M5PowerMOSFETinaPowerFLAT??8x8HVpackage Description ThisdeviceisanN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH?horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhig | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.067ohmtyp.,35AMDmeshVPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,35A,0.067廓typ.,MDmesh??VPowerMOSFETsinTO-3PF,TO-247andTO-247longleadspackages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel650V,35A,0.067廓typ.,MDmesh??VPowerMOSFETsinTO-3PF,TO-247andTO-247longleadspackages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
TO-220 |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
ST |
23+ |
T0-220 |
16900 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ST |
22+ |
T0-220 |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價(jià) | ||
ST/進(jìn)口原 |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
ST |
20+ |
TO-220 |
38560 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
S |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST/意法 |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
S |
TO220AB |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
S |
23+ |
TO220AB |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
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