首頁 >P25Q40H-SSH-IR>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半導體(上海)股份有限公司 | PUYA |
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