首頁 >O2C01>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
5TO6WATTDC-DCCONVERTERS | RSGRSG Electronic Components GmbH RSG電子元件有限公司 | RSG | ||
VCXO&VHFBandVCOApplicationsVaractorDiode SiliconDiffused-JunctionType Features ?Highcapacitanceratio.CR(C1.0V/C4.0V)=5.0typ ?Ultrasmall-sizedpackage(1008),slimpackage (0.6mm),leadlesspackage. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社 | SANYO | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120to400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
ComplementarySO??,DualPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
COMPLEMENTARYDUALTMOSPOWERFET2.0AMPERES12VOLTS MediumPowerSurfaceMountProducts ComplementaryTMOSFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.The | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
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