NTH4L025N065SC1

Silicon Carbide SiC MOSFET - 19 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=19m@VGS=18V Typ.RDS(on)=25m@VGS=15V ?UltraLowGateCharge(QG(tot)=164nC) ?LowCapacitance(Coss=278pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelin

NTH4L025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L; ? Tj = 175°C\n? High reliability at high temperature ambient\n? Ultra Low Gate Charge (Typ. Qg = 164 nC)\n? Low switching loss\n? High Speed Switching with Low Capacitance (Coss = 278 pF)\n? Low switching loss\n? Zero reverse recovery current of body diode\n? Higher system reliability in LLC and Phase shift full bridge circuit\n? Kelvin Source configuration\n? Lower switching loss and lower Vgs oscillation\n? Max RDS(on) = 19 mΩ at Vgs = 18V\n? 100% UIL Tested\n? RoHS Compliant\n;

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.